Open AccessPreparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex
Author(s) -
А. С. Саидов,
А. Ш. Раззоков
Publication year - 2020
Publication title -
sibirskij fizičeskij žurnal
Language(s) - English
Resource type - Journals
ISSN - 2541-9447
DOI - 10.25205/2541-9447-2020-15-2-84-91
Subject(s) - epitaxy , solid solution , dislocation , tin , materials science , substrate (aquarium) , gallium , variable (mathematics) , crystallography , condensed matter physics , layer (electronics) , chemistry , nanotechnology , metallurgy , mathematics , composite material , mathematical analysis , geology , physics , oceanography
The article shows the selection of the optimal process regime for the growth of epitaxial layers of Si1–xGex solid solutions from tin and gallium solution – melt on a Si substrate, with the lowest dislocation densities that we experimentally achieved. An exponential relationship was found between the values of the dislocation density and the film thickness.With a smooth variable composition of the structure, respectively, by smoothly changing the lattiece parameters of the graded-gap solid solution, structurally perfect epitaxial layers Si1–xGex (0 < x < 1) were obtained