Open AccessBoundary-Layer Thermochemical Analysis During Passive and Active Oxidation of Silicon Carbide
Author(s) -
Samuel Y. Chen,
Iain D. Boyd
Publication year - 2020
Publication title -
journal of thermophysics and heat transfer
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.548
H-Index - 67
eISSN - 1533-6808
pISSN - 0887-8722
DOI - 10.2514/1.t5864
Subject(s) - silicon carbide , materials science , non equilibrium thermodynamics , boundary layer , enthalpy , silicon , thermodynamics , ceramic , carbide , layer (electronics) , chemical physics , composite material , chemistry , metallurgy , physics