Boundary-Layer Thermochemical Analysis During Passive and Active Oxidation of Silicon Carbide
Author(s) -
Samuel Chen,
Iain D. Boyd
Publication year - 2020
Publication title -
journal of thermophysics and heat transfer
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.548
H-Index - 67
eISSN - 1533-6808
pISSN - 0887-8722
DOI - 10.2514/1.t5864
Subject(s) - silicon carbide , materials science , boundary layer , layer (electronics) , silicon , thermodynamics , composite material , metallurgy , physics
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