Open AccessEffect of Temperature on Electrical Behavior of 4H-SiC and 6H-SiC Double-Gate (DG) MOSFETs in 130nm Technology
Author(s) -
Mourad Hebal,
Menaouer Bennaoum,
Hocine Abdelhak Azzeddine,
M. Benzohra,
D. Chalabi
Publication year - 2021
Publication title -
journal of engineering science and technology review
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.19
H-Index - 28
eISSN - 1791-9320
pISSN - 1791-2377
DOI - 10.25103/jestr.142.03
Subject(s) - materials science , optoelectronics , double gate , mosfet , silicon carbide , engineering physics , electrical engineering , metallurgy , transistor , engineering , voltage