Open AccessElectron trapping mechanism in a multi-level organic fet memory using lithium-ion-encapsulated fullerene as the floating gate
Author(s) -
Tran Cuong Manh
Publication year - 2019
Publication title -
tạp chí khoa học giao thông vận tải/transport and communications science journal
Language(s) - English
Resource type - Journals
eISSN - 2615-9554
pISSN - 1859-2724
DOI - 10.25073/tcsj.70.3.27
Subject(s) - trapping , lithium (medication) , fullerene , materials science , ion , electron , organic field effect transistor , cyclic voltammetry , spectroscopy , analytical chemistry (journal) , optoelectronics , chemistry , transistor , field effect transistor , electrochemistry , voltage , electrode , physics , medicine , ecology , organic chemistry , quantum mechanics , biology , endocrinology , chromatography
We report on the electron trapping mechanism in a multi-level organic field effect transistor (OFET) memory using Lithium-ion-encapsulated fullerene (Li+@C60) as the floating gate. Based on the estimation of trapped electron number per each Li+@C60 molecule when a programming voltage was applied, the active domain of the floating gate was determined to be the surface of the Li+@C60 domain. An analysis of the cyclic voltammetry indicated that each Li+@C60 molecule can trap electrons at the trapping energy level of -4.94 and -4.49 eV. The number of trapped electron was confirmed by the ultraviolet-visible spectroscopy (UV-Vis).