
DFT based Investigation of Structural, Thermodynamic, Mechanical and Electronic Properties of RuVZ (Z: As, Bi, Sb) Half-Heusler Semiconductors
Author(s) -
Nenuwe Oyindenyifa Nelson,
Omagbemı Oghogho
Publication year - 2022
Publication title -
tạp chí khoa học đại học quốc gia hà nội: toán - lý (vnu journal of science: mathematics - physics)
Language(s) - English
Resource type - Journals
eISSN - 2615-9341
pISSN - 2588-1124
DOI - 10.25073/2588-1124/vnumap.4705
Subject(s) - debye model , lattice constant , density functional theory , materials science , condensed matter physics , band gap , spintronics , semiconductor , debye , heat capacity , thermoelectric effect , direct and indirect band gaps , thermodynamics , computational chemistry , ferromagnetism , chemistry , physics , optoelectronics , diffraction , quantum mechanics