Open AccessImpact of Line Resistance Combined with Device Variability on Resistive RAM Memories
Author(s) -
H. Aziza,
P. Canet,
J. Postel-Pellerin
Publication year - 2018
Publication title -
advances in science technology and engineering systems journal
Language(s) - English
Resource type - Journals
ISSN - 2415-6698
DOI - 10.25046/aj030102
Subject(s) - resistive random access memory , resistive touchscreen , robustness (evolution) , reliability (semiconductor) , computer science , memory cell , context (archaeology) , voltage , electronic engineering , electrical engineering , engineering , transistor , physics , chemistry , biology , paleontology , biochemistry , power (physics) , quantum mechanics , gene
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