
Two-terminal Resistive-switching Memories based on Liquid AgNO3 as Artificial Synapses
Author(s) -
Andreia Silva,
Catarina Dias,
J. Ventura
Publication year - 2022
Publication title -
u.porto journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2183-6493
DOI - 10.24840/2183-6493_008.003_0007
Subject(s) - polydimethylsiloxane , resistive touchscreen , electrode , materials science , terminal (telecommunication) , resistive random access memory , process (computing) , computer science , nanotechnology , optoelectronics , chemistry , telecommunications , computer vision , operating system