Open AccessDependence of ionicity and mechanical properties on valence electron density in binary tetrahedral semiconductors
Author(s) -
Amar Bahadur,
M. Mishra
Publication year - 2012
Publication title -
journal of research in physics
Language(s) - English
Resource type - Journals
eISSN - 2217-933X
pISSN - 1450-7404
DOI - 10.2478/v10242-012-0011-1
Subject(s) - homopolar motor , semiconductor , tetrahedron , materials science , condensed matter physics , valence electron , binary number , electron density , bulk modulus , electron , valence (chemistry) , chemistry , physics , crystallography , quantum mechanics , mathematics , arithmetic , optoelectronics , magnet
Interesting relationships have been found between the electron density parameter, average bond length, homopolar energy gap, heteropolar energy gap, ionicity, bulk modulus and microhardness for binary tetrahedral semiconductors. The estimated values of these parameters are in good agreement with the available experimental values and theoretical findings. The electron density parameter data are the only input data to estimate all the above properties.