Open AccessInfluence of molar concentration and temperature on structural, optical, electrical and X-ray sensing properties of chemically grown nickel-bismuth-sulfide (NixBi2−xS3) thin films
Author(s) -
R. Sabarish,
N. Suriyanarayanan,
J.M. Kalita,
M.P. Sarma,
G. Wary,
Vipul Kheraj,
Sampat G. Deshmukh
Publication year - 2018
Publication title -
materials science poland
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.257
H-Index - 32
eISSN - 2083-1331
pISSN - 2083-134X
DOI - 10.2478/msp-2018-0072
Subject(s) - materials science , analytical chemistry (journal) , stoichiometry , band gap , thin film , nickel , ternary operation , bismuth , deposition (geology) , nanotechnology , metallurgy , optoelectronics , chemistry , paleontology , chromatography , sediment , computer science , biology , programming language
In this report, ternary semiconducting Ni x Bi 2−x S 3 (x = 0.2 M and 0.5 M) thin films were synthesized in situ for the first time by a chemical bath deposition technique at different bath temperatures (60 °C, 70 °C and 80 °C). The effects of concentration and deposition temperature on the deposited films were studied by combining the results of structural, morphological, optical and electrical analyses. The growth of Ni x Bi 2−x S 3 films with good crystalline nature and interconnected grain arrangement takes place due to increasing the concentration of Ni 2+ ions in bismuth sulfide matrix. EDS result confirmed the stoichiometry of Ni x Bi 2−x S 3 formation. Wettability test demonstrated that the surface of the film was hydrophilic in nature. The optical absorption spectra revealed that the bandgap E g of the x = 0.5 M film deposited at 70 °C was about 1.36 eV. Current-voltage (I-V) characteristics of the x = 0.5 M film deposited at 70 °C were studied under X-ray radiation and dark condition. An X-ray detection sensitivity analysis showed that the detection sensitivity is optimum when the bias voltage applied across the film is low (~0.9 V). These findings reveal that the film with x = 0.5 M deposited at 70 °C can be used as an efficient low cost X-ray sensor.