Open AccessZnS/Cu2ZnSnS4/CdTe/In Thin Film Structure for Solar Cells
Author(s) -
M. A. Jafarov,
E. F. Nasirov,
S. A. Jahangirova
Publication year - 2018
Publication title -
journal of advances in physics
Language(s) - English
Resource type - Journals
ISSN - 2347-3487
DOI - 10.24297/jap.v14i2.7395
Subject(s) - cadmium telluride photovoltaics , materials science , layer (electronics) , optoelectronics , solar cell , amorphous solid , thin film , semiconductor , electrode , thin film solar cell , czts , band gap , energy conversion efficiency , quantum dot solar cell , nanotechnology , polymer solar cell , crystallography , chemistry
A solar cell with glass/ITO/ZnS/Cu2ZnSnS4/CdTe/In structure has been fabricated using all-electrodeposited ZnS, Cu2ZnSnS4 and CdTe thin films. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form ITO/ZnS/Cu2ZnSnS4/CdTe/In solar cell resulted in the formation of this 3-layer device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >12% under AM1.5 illumination conditions at room temperature. These results demonstrate the advantages of the multi-layer device architecture over the conventional 2-layer structure.