ZnS/Cu2ZnSnS4/CdTe/In Thin Film Structure for Solar Cells | Zendy

M. A. Jafarov | Zendy; E. F. Nasirov | Zendy; S. A. Jahangirova | Zendy

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ZnS/Cu2ZnSnS4/CdTe/In Thin Film Structure for Solar Cells

Author(s) -

M. A. Jafarov,

E. F. Nasirov,

S. A. Jahangirova

Publication year - 2018

Publication title -

journal of advances in physics

Language(s) - English

Resource type - Journals

ISSN - 2347-3487

DOI - 10.24297/jap.v14i2.7395

Subject(s) - cadmium telluride photovoltaics , materials science , layer (electronics) , optoelectronics , solar cell , amorphous solid , thin film , semiconductor , electrode , thin film solar cell , czts , band gap , energy conversion efficiency , quantum dot solar cell , nanotechnology , polymer solar cell , crystallography , chemistry

A solar cell with glass/ITO/ZnS/Cu2ZnSnS4/CdTe/In structure has been fabricated using all-electrodeposited ZnS, Cu2ZnSnS4 and CdTe thin films. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form ITO/ZnS/Cu2ZnSnS4/CdTe/In solar cell resulted in the formation of this 3-layer device structure. This has yielded corresponding improvement in all the solar cell parameters resulting in a conversion efficiency >12% under AM1.5 illumination conditions at room temperature. These results demonstrate the advantages of the multi-layer device architecture over the conventional 2-layer structure.

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