Open AccessOptical and Electrical Performance Analysis of InGaAs/InP Laser for Various Crystal Orientations
Author(s) -
Maad M. Mijwil
Publication year - 2022
Publication title -
asian journal of engineering and technology
Language(s) - English
Resource type - Journals
ISSN - 2321-2462
DOI - 10.24203/ajet.v10i1.6925
Subject(s) - wavelength , laser , materials science , crystal (programming language) , hamiltonian (control theory) , optics , optoelectronics , plane wave , matlab , physics , mathematics , computer science , mathematical optimization , programming language , operating system
The optoelectronic achievement of a lattice matching InGaAs/InP lateral cavity surface radiating LASER in crystal orientations (100), (110), (111), (113), and (131) is computationally simulated utilising MATLAB by attempting to solve a k.p Hamiltonian of eight-band utilising only a finite difference strategy with spin-orbit linkage. To shift wave-vector k as well as Hamiltonian from traditional (100) plane orientation, tensor plane revolution equations are used. It is demonstrated that optical emission spectrum and crystal plane alignments have a significant correlation. At a carriers injection density of 2.50 x 1018 per cm3, the maximum and minimum gains are measured in the (111) as well as (100) orientations, respectively, with optimum emission wavelengths of 1770.00nm and 1680.00nm. This research will serve as a catalyst for the development of ultra-fast optoelectronic devices with improved performance thanks to the use of non-100 orientation epitaxial layers.