Open AccessOptimization of carbon nano tube field-effect transistors (CNTFET) and compare them to CMOS silicon
Author(s) -
Mahdi Salimi,
Kamran Khoddam,
Darya Morakkabatchy,
Maryam Pornadem
Publication year - 2019
Publication title -
journal of research in science, engineering and technology
Language(s) - English
Resource type - Journals
ISSN - 2693-8464
DOI - 10.24200/jrset.vol3iss04pp10-16
Subject(s) - carbon nanotube field effect transistor , carbon nanotube , cmos , transistor , mosfet , materials science , electronic circuit , field effect transistor , nanotechnology , nanoelectronics , electronic engineering , optoelectronics , electrical engineering , voltage , engineering
In this paper, a brief review of CNT carbon nanotube transistors will be explained and then the optimization methods will be discussed. Details of AC and DC transistor CNFET and Characteristics of CNFET at high temperature also shows that unlike MOSFET flo below the threshold for this type of component temperature is reduced, thus using CNFET at high temperatures can be more quickly and less leakage current is achieved. Processes for the synthesis of CNT are not complete, a subject of controversy in the field fluctuations of density in CNT growth, as well as an analysis of the credit CNFET because sway density of CNT could lead to complete failure CNFET, so to evaluate it, and we later CNFET applications in comparison with CMOS logic circuits using the latest research, we'll CNFET.