
Evaluation and Comparison of CMOS logic circuits with CNTFET
Author(s) -
Mahsa Sedaghat,
Mahdi Salimi
Publication year - 2019
Publication title -
journal of research in science, engineering and technology
Language(s) - English
Resource type - Journals
ISSN - 2693-8464
DOI - 10.24200/jrset.vol3iss04pp1-9
Subject(s) - cmos , carbon nanotube field effect transistor , electronic circuit , adiabatic circuit , electronic engineering , pass transistor logic , logic family , computer science , logic gate , power–delay product , transistor , spice , mosfet , electrical engineering , engineering , logic synthesis , digital electronics , adder , field effect transistor , voltage
In this paper, a comparison between CMOS and MOSFET base circuits HSPICE is done with software. 0.13 CMOS transistor model for simulation and CNTFET Model of Stanford University used. In simulations amounts of power, circuit delay and PDP is calculated and these values were compared at the end. And tried to CNTFET applications of transistors in circuit design, including memory and logic circuits Ternary be expressed.