Open AccessEXTREMUM OF ELECTROPHYSICAL PROPERTIES FROM THE LEVEL OF DOPING IN GALLIUM ARSENIDE
Author(s) -
Alfiya G. Shlyakhova,
Alexander T. Shlyakhov
Publication year - 2018
Publication title -
naučno-tehničeskij vestnik povolžʹâ
Language(s) - English
Resource type - Journals
ISSN - 2079-5920
DOI - 10.24153/2079-5920-2018-8-2-42-45
Subject(s) - gallium arsenide , doping , materials science , gallium , condensed matter physics , optoelectronics , physics , metallurgy