Open AccessFormation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS
Author(s) -
Sumio Hosaka,
Hui Zhang,
You Yin,
Hayato Sone
Publication year - 2021
Publication title -
european journal of applied physics
Language(s) - English
Resource type - Journals
ISSN - 2684-4451
DOI - 10.24018/ejphysics.2021.3.6.141
Subject(s) - materials science , polystyrene , line (geometry) , nano , nanometre , line width , confined space , space (punctuation) , resist , siloxane , nanotechnology , optics , composite material , chemistry , geometry , physics , polymer , layer (electronics) , organic chemistry , linguistics , mathematics , philosophy
We have formed nanometer-wide lines & spaces by graphoepitaxy of sphere type polystyrene-poly dimethyl siloxane (PS-PDMS), with a molecular weight (MW) of 14.6 kg/mol., along electron-beam (EB)-drawn resist guide lines. We have 3-dimensionally ordered the sphere type PS-PDMS by controlling a thickness of the PS-PDMS along improved guide lines to form the line and space pattern. We obtained the thickness dependence on the pattern change such as nano-dot arrays and nano-line & space patterns. When the thickness increased to about +4 nm from the upper thickness for formation of the dot arrays, the line & space patterns have been formed with about 7 nm in line width and 14 nm in pitch.