Open AccessPhotoluminescent Enhancement by Effect of Incorporation Nickel in ZnO Films Grown
Author(s) -
Delfino R. Gutiérrez,
T. Díaz-Becerril,
G. Garcı́a-Salgado,
Antonio Coyopol-Solís,
E. Rosendo-Andrés,
R. Galeazzi-Isasmendi,
R. PeñaSierra,
Crisóforo Morales-Ruiz,
R. Romano-Trujillo,
F.G. Nieto-Caballero
Publication year - 2021
Publication title -
european journal of engineering and technology research
Language(s) - English
Resource type - Journals
ISSN - 2736-576X
DOI - 10.24018/ejeng.2021.6.5.2550
Subject(s) - materials science , photoluminescence , zinc , non blocking i/o , scanning electron microscope , nickel , chemical vapor deposition , doping , oxygen , chemical engineering , nickel oxide , nanotechnology , metallurgy , optoelectronics , composite material , chemistry , catalysis , biochemistry , organic chemistry , engineering
Microstructured films of undoped zinc oxide (ZnO) and ZnO doped with nickel (ZnO:Ni) were grown by hot filament chemical vapor deposition (HFCVD) technique on Si (100) substrates at 500 °C. Pellets of ZnO and ZnO:NiO as oxidant agenst were used. A shift to the right around 0.17 degree of the X-Ray Diffraction pattern of the ZnO:Ni film was observed with respect to undoped ZnO films. Morphologically by Scanning Electron Microscopy was noticed a Core-Shell type growth in ZnO undoped and a nanostructured type (Nano-wire) in ZnO doped with Ni. Photoluminescence measurements showed an increase in the intensity of the green emission band of ZnO:Ni. It was attributed to defects of oxygen vacancies (VO), zinc vacancies (VZn), zinc interstitials (Zni), oxygen interstitials (Oi), and oxygen vacancies complex (VO complex) in the structure of the film. The incorporation of Ni atoms in the ZnO structure stresses the crystal lattice, leaving behind a large number of surface defects that increase the emission of PL.