Open AccessThe Features of Electronic Conduction in InAs
Author(s) -
E. Khutsishvilii,
Z. Chubinishvili,
G. P. Kekelidze,
I. Kalandadze,
T. Qamushadze,
M. R. Metskhvarishvili
Publication year - 2021
Publication title -
european journal of engineering and technology research
Language(s) - English
Resource type - Journals
ISSN - 2736-576X
DOI - 10.24018/ejeng.2021.6.3.2401
Subject(s) - irradiation , scattering , materials science , electron , electron mobility , impurity , melting point , crystallographic defect , phonon scattering , thermal conduction , ion , condensed matter physics , electron beam processing , phonon , analytical chemistry (journal) , chemistry , optics , optoelectronics , physics , nuclear physics , composite material , organic chemistry , chromatography , quantum mechanics
The electrical properties of n-type crystals of InAs compound, grown from stoichiometric melt by the horizontal zone melting method, have been investigated in the temperature range of 4.2 K-300 K before and after fast neutron irradiation up to high integral fluences of 2×1018n?cm-2. At a fixed temperature electrons concentration (n) increases almost by one order during irradiation, and practically does not change with increasing of temperature. n increases only slightly by increasing of temperature near 300 K, both before and after irradiation. When ? 4×1018cm-3 the change of during irradiation is negligible. Comparison of experimental data of mobility with theory shows that the privileged scattering mechanism of electrons at 300 K is scattering on optical phonons in InAs with 1016-1017 cm-3 and scattering on ions of impurity in InAs with n~1018-1019 cm-3. The analysis shows that during irradiation point type scattering centers of donor-type structural defects with shallow levels in the forbidden zone appear. Consequently, the mobility decreases during irradiation. At 300 K in sample with electrons concentration of 3×1016 cm-3 the mobility decreases by 5 times after irradiation, which is equivalent to the formation of 1.5×1019cm-3 charged point scattering centers.