Open AccessStrain gages based on gallium arsenide whiskers
Author(s) -
A. A. Druzhinin,
AUTHOR_ID,
О. П. Кутраков,
Igor Ostrovskii,
Natalia Liakh-Kaguy,
Dmytro Chemerys
Publication year - 2021
Publication title -
ìnfokomunìkacìjnì tehnologìï ta elektronna ìnženerìâ
Language(s) - English
Resource type - Journals
ISSN - 2786-4553
DOI - 10.23939/ictee2021.01.128
Subject(s) - materials science , strain gauge , whiskers , atmospheric temperature range , strain (injury) , temperature coefficient , deformation (meteorology) , composite material , sensitivity (control systems) , gallium arsenide , conductivity , optoelectronics , electronic engineering , chemistry , thermodynamics , physics , medicine , engineering
Strain-resistant properties of GaAs whiskers and ribbons of p- and n-type conductivity with various length (0.3–7 mm) and diameter (10–40 μm) have been investigated in a wide range of temperatures. Strain gages based on heavily doped p-type conductivity GaAs whiskers have linear deformation characteristics and a weak temperature dependence of strain sensitivity in the temperature range from –20 to +3500 °C. The temperature coefficient of resistance (TСR) of not fixed strain gages is about +(0.12–0.16)% × grad–1. The temperature coefficient of strain sensitivity is –0.03 % × deg–1 in the temperature range –120+800 °C. Strain gages based on n-type GaAs ribbons are characterized by high flexibility and high strain sensitivity. They are capable up to +4000 °C and can be used to measure deformations on curved surfaces at high temperatures. TСR of not fixed strain gages is –0.01 +0.03 % × grad–1. The temperature coefficient of strain sensitivity is –0.16% × deg–1 in the temperature range –120 ... +4000 °С.