z-logo
open-access-imgOpen Access
Monitoring of SiC MOSFET junction temperature with on-state voltage at high currents
Author(s) -
Dan Zheng,
Yuhui Kang,
Han Cao,
Xiaoguang Chai,
Tao Fan,
Puqi Ning
Publication year - 2020
Publication title -
chinese journal of electrical engineering
Language(s) - English
Resource type - Journals
ISSN - 2096-1529
DOI - 10.23919/cjee.2020.000014
Subject(s) - junction temperature , mosfet , voltage , materials science , calibration , diode , modulation (music) , optoelectronics , signal (programming language) , electronic engineering , state (computer science) , topology (electrical circuits) , high voltage , electrical engineering , computer science , physics , engineering , transistor , acoustics , thermal , quantum mechanics , algorithm , meteorology , programming language

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom