Open AccessThermal management of the through silicon vias in 3-D integrated circuits
Author(s) -
KangJia Wang,
Chu-Xia Hua,
Hong-Chang Sun
Publication year - 2019
Publication title -
thermal science/thermal science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.339
H-Index - 43
eISSN - 2334-7163
pISSN - 0354-9836
DOI - 10.2298/tsci1904157w
Subject(s) - integrated circuit , silicon , materials science , interconnection , electronic circuit , thermal , thermal conductivity , through silicon via , optoelectronics , electronic engineering , engineering physics , computer science , electrical engineering , engineering , composite material , telecommunications , physics , meteorology
The through silicon via technology is a promising and preferred way to realize the reliable interconnection for 3-D integrated circuit integration. However, its size and the property of the filled-materials are two factors affecting the thermal behavior of the integrated circuits. In this paper, we design 3-D integrated circuits with different through silicon via models and analyze the effect of different material-filled through silicon vias, aspect ratio and thermal conductivity of the dielectric on the steady-state temperature profiles. The results presented in this paper are expected to aid in the development of thermal design guidelines for through silicon vias in 3-D integrated circuits.