Open AccessThermal annealing of Ag implanted silicon: Relationship between structural and optical properties
Author(s) -
Almedina Modrić-Šahbazović,
M. Novaković,
E. Schmidt,
N. Bibić,
Izet Gazdić,
Carsten Ronning,
Zlatko Lj. Rakočević
Publication year - 2020
Publication title -
science of sintering/science of sintering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.309
H-Index - 25
eISSN - 1820-7413
pISSN - 0350-820X
DOI - 10.2298/sos2002207m
Subject(s) - materials science , annealing (glass) , silicon , surface plasmon resonance , fluence , ion implantation , plasmon , ion , recrystallization (geology) , analytical chemistry (journal) , optoelectronics , nanoparticle , nanotechnology , chemistry , composite material , organic chemistry , chromatography , biology , paleontology
Low energy Ag ions were implanted into silicon and annealed at different temperatures in order to generate plasmonic active silicon hybrids. It was found that as the ion fluence of irradiation was increased, a monotonic decrease in the absorption spectra in the ultraviolet region occurs, due to amorphization and macrostructuring of the Si surface. At the same time, the optical spectra are characterized by a strong band after implantation presenting the contribution of the surface plasmon resonance (SPR) of Ag nanoparticles. After heat treatment at 500 and 600?C, the SPR peak shifts to lower wavelengths, as compared to as implanted samples, whereas the plasmon position shifts to higher wavelengths for annealing at 700?C. This observation can be explained by either an out-diffusion of Ag or by stress relaxation and recrystallization of silicon.