Open AccessC-V and I-V characterisation of CdS/CdTe thin film solar cell using defect density model
Author(s) -
Debashish Pal,
Soumee Das
Publication year - 2021
Publication title -
serbian journal of electrical engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.133
H-Index - 5
eISSN - 2217-7183
pISSN - 1451-4869
DOI - 10.2298/sjee2102255p
Subject(s) - band diagram , solar cell , cadmium telluride photovoltaics , materials science , doping , capacitance , optoelectronics , voltage , open circuit voltage , reliability (semiconductor) , impurity , schottky diode , schottky barrier , analytical chemistry (journal) , band gap , electrical engineering , electrode , chemistry , diode , physics , power (physics) , engineering , organic chemistry , quantum mechanics , chromatography
This paper presents a detailed study of the current-voltage (I-V) and capacitance-voltage (C-V) measurements made on a CdS/CdTe based solar cell by numerical modeling. Implementation of the simulated cell having a superstrate configuration was done with the help of SCAPS program using defect density model. The I-V characterisation includes window and absorber layer optimisation based on various factors including the impurity doping concentration, thickness and defect density. The energy band diagram, spectral response and currentvoltage plot of the optimised cell configuration are shown. C-V characterisation (Mott-Schottky analysis) of the solar cell is conducted at different low frequencies to determine the flatband potential, carrier concentration and to validate the reliability of the results. The optimum device performance was obtained when the active layer was 2 ?m thick with a doping level of 1?1015/cm3.