Open AccessLow-temperature impedance spectroscopic analyses of ceramic electrodes based on Mo and Co co-doped SnO2
Author(s) -
Diêgo Jorge Lobato Ferreira,
Isabela Cristina Fernandes Vaz,
R. M. Rubinger,
Camila Buono,
L.S.R. Rocha,
Miguel Adolfo Ponce,
E. Longo,
Alexandre Zirpoli Simões,
F. Moura
Publication year - 2019
Publication title -
processing and application of ceramics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.326
H-Index - 15
eISSN - 2406-1034
pISSN - 1820-6131
DOI - 10.2298/pac1904360f
Subject(s) - materials science , crystallite , doping , rutile , ceramic , analytical chemistry (journal) , resistive touchscreen , electrode , porosity , electrical resistivity and conductivity , conductivity , composite material , chemical engineering , optoelectronics , metallurgy , chemistry , electrical engineering , chromatography , engineering
Low resistive electrodes based on Co and Mo co-doped SnO2 were prepared by the conventional solid-state reaction and sintered at 1250?C for 2 h. Concentration of Co2O3 precursor was unchanged (1mol%), while MoO3 was varied (0.25, 0.50 to 0.75mol%) to promote conductivity. The structural and microstructural characterization revealed that the samples have a rutile-type structure without secondary phases and large rutile grains with low porosity. Electrical measurements on DC mode have shown a semiconductor behaviour of the SnO2 samples doped with 0.25 and 0.75 at.% of Mo at temperatures below 50K, indicating their suitability for low-temperature electronic applications. Impedance measurements indicate reduced energy barriers of less than 1meV formed between highly conductive crystallites for the SnO2 samples doped with 0.25 and 0.75 at.% of Mo. The sample with Mo content of 0.50 at.% presented a higher energy barrier at a few hundredths of eV, with space charges at the crystallite boundaries.