Open AccessReliability of computer memories in radiation environment
Author(s) -
Irfan Fetahović,
Ćemal B. Dolićanin,
B. Lončar,
Nenad Kartalović
Publication year - 2016
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1603240f
Subject(s) - eprom , radiation , radiation hardening , eeprom , reliability (semiconductor) , materials science , semiconductor device , semiconductor , optoelectronics , computer science , electrical engineering , optics , embedded system , physics , engineering , nanotechnology , power (physics) , quantum mechanics , layer (electronics)
The aim of this paper is examining a radiation hardness of the magnetic (Toshiba MK4007 GAL) and semiconductor (AT 27C010 EPROM and AT 28C010 EEPROM) computer memories in the field of radiation. Magnetic memories have been examined in the field of neutron radiation, and semiconductor memories in the field of gamma radiation. The obtained results have shown a high radiation hardness of magnetic memories. On the other side, it has been shown that semiconductor memories are significantly more sensitive and a radiation can lead to an important damage of their functionality. [Projekat Ministarstva nauke Republike Srbije, br. 171007