Open AccessThe impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium
Author(s) -
D Marija Obrenovic,
R Djordje Lazarevic,
J Srboljub Stankovic,
Nenad Kartalović
Publication year - 2016
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1601097o
Subject(s) - monocrystalline silicon , germanium , materials science , silicon , radiation , monte carlo method , neutron , impurity , irradiation , radiation resistance , radiochemistry , optoelectronics , optics , nuclear physics , physics , chemistry , statistics , mathematics , quantum mechanics
The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and g-radiation. Change of the samples' specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation. [Projekat Ministarstva nauke Republike Srbije, br. 171007