
Degradation effects of the output electrical characteristics of Si solar cells as a result of ionizing radiation under low light conditions
Author(s) -
Nebojša Stojanović,
Biljana B. Simić,
Koviljka Stanković,
Đorđe Lazarević
Publication year - 2015
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1503210s
Subject(s) - radiation , materials science , equivalent series resistance , ionizing radiation , irradiation , optoelectronics , degradation (telecommunications) , radiation resistance , voltage , open circuit voltage , short circuit , internal resistance , silicon , solar cell , current (fluid) , optics , power (physics) , electrical engineering , computer science , physics , telecommunications , battery (electricity) , quantum mechanics , nuclear physics , engineering
This paper presents results of radiation resistance of different types of commercially available single- and poly-crystalline silicon solar cells. Sample cells were subjected to gamma radiation from gamma radiation source 60Co. Characteristic parameters of solar cells were extracted from obtained I-V curves: open circuit voltage, short circuit current, maximum power point voltage and current, efficiency, fill factor, and series resistance. Obtained results show the level of parameters' degradation with purpose of increasing solar cells applications in radiation environments. [Projekat Ministarstva nauke Republike Srbije, br. 171007