Open AccessSensitivity of RADFET for gamma and X-ray doses used in medicine
Author(s) -
Momčilo M. Pejović,
M Svetlana Pejovic,
Dragan Stojanov,
Olivera Ciraj-Bjelac
Publication year - 2014
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1403179p
Subject(s) - irradiation , materials science , gamma ray , radiation , threshold voltage , absorbed dose , optoelectronics , sensitivity (control systems) , dosimeter , x ray , dosimetry , nuclear medicine , range (aeronautics) , transistor , optics , physics , voltage , medicine , nuclear physics , electronic engineering , quantum mechanics , composite material , engineering
In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using 60Co source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift DVT and radiation dose D. The application of positive bias of +5 V at the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in DVT and also, approximately a linear dependence between DVT and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range. [Projekat Ministarstva nauke Republike Srbije, br. 171007