Open AccessThe comparison of gamma-radiation and electrical stress influences on oxide and interface defects in power VDMOSFET
Author(s) -
S. Djorić-Veljković,
I. Manić,
V. Davidović,
Danijel Danković,
S. Golubović,
N. Stojadinović
Publication year - 2013
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1304406d
Subject(s) - materials science , oxide , annealing (glass) , interface (matter) , stress (linguistics) , optoelectronics , gate oxide , irradiation , threshold voltage , field effect transistor , radiation , metal , transistor , voltage , electrical engineering , composite material , optics , metallurgy , physics , linguistics , philosophy , capillary number , capillary action , nuclear physics , engineering
The behaviour of oxide and interface defects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors, firstly degraded by the gamma-irradiation and electric field and subsequently recovered and annealed, is presented. By analyzing the transfer characteristic shifts, the changes of threshold voltage and underlying changes of gate oxide and interface trap densities during the stress (recovery, annealing) of investigated devices, it is shown that these two types of stress influence differently on the gate oxide and the SiO2-Si interface. [Projekat Ministarstva nauke Republike Srbije, br. OI171026