Open AccessSimulation-based calculations of the proton dose in phase change memory cells
Author(s) -
Nevena Zdjelarević,
Ivan Knežević,
Miloš Vujisić,
Ljubinko Timotijević
Publication year - 2013
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1303299z
Subject(s) - proton , active layer , materials science , stack (abstract data type) , phase change memory , monte carlo method , irradiation , phase (matter) , layer (electronics) , thermal , phase change material , shape memory alloy , optoelectronics , nanotechnology , composite material , chemistry , physics , thermodynamics , nuclear physics , computer science , statistics , mathematics , organic chemistry , programming language , thin film transistor
Monte Carlo simulations of proton irradiation on phase change memory cells were conducted and the proton dose, in both the whole memory cell and in its active layer, calculated. The memory cell was modeled by a multi-layer stack consisting of two TiW electrodes and ZnS-SiO2 films as insulators surrounding the active region. Materials considered for the active region were Ge2Sb2Te5, AgSbSe2, and Si2Sb2Te5. The effects of exposing phase change memory cells to proton beams were investigated for various thicknesses of phase change materials and different proton energies. Radiation-induced changes in the investigated memory cells are presented, including the accumulation of atomic displacements and the thermal heating of the active region. Possible effects of these changes on cell operation are discussed. [Projekat Ministarstva nauke Republike Srbije, br. 171007