Open AccessAbsorbed dose assessment in particle-beam irradiated metal-oxide and metal-nonmetal memristors
Author(s) -
Ivan Knežević,
Nevena Zdjelarević,
M. Obrenovic,
Miloš Vujisić
Publication year - 2012
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1203290k
Subject(s) - materials science , nonmetal , titanium dioxide , irradiation , nitride , oxide , zirconium dioxide , analytical chemistry (journal) , metal , inorganic chemistry , nanotechnology , composite material , layer (electronics) , metallurgy , chemistry , nuclear physics , physics , chromatography
Absorbed dose was estimated after Monte Carlo simulation of proton and ion beam irradiation on metal-oxide and metal-nonmetal memristors. A memristive device comprises two electrodes, each of a nanoscale width, and a double-layer active region disposed between and in electrical contact with electrodes. Following materials were considered for the active region: titanium dioxide, zirconium dioxide, hafnium dioxide, strontium titanium trioxide and galium nitride. Obtained results show that significant amount of oxygen ion - oxygen and nonmetal ion - nonmetal vacancy pairs is to be generated. The loss of such vacancies from the device is believed to deteriorate the device performance over time. Estimated absorbed dose values in the memristor for different constituting materials are of the same order of magnitude because of the close values of treshold displacement energies for the investigated materials