Open AccessGamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides
Author(s) -
Momčilo M. Pejović,
M Svetlana Pejovic,
Ćemal B. Dolićanin,
Djordje Lazarević
Publication year - 2011
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1103261p
Subject(s) - irradiation , pmos logic , materials science , threshold voltage , dosimeter , optoelectronics , annealing (glass) , oxide , gamma ray , radiation , saturation (graph theory) , analytical chemistry (journal) , transistor , voltage , radiochemistry , optics , chemistry , electrical engineering , composite material , physics , nuclear physics , metallurgy , mathematics , combinatorics , chromatography , engineering
Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing