Open AccessRadiation-sensitive field effect transistor response to gamma-ray irradiation
Author(s) -
Momčilo M. Pejović,
A. Jakšić
Publication year - 2011
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1101025p
Subject(s) - irradiation , threshold voltage , materials science , subthreshold conduction , optoelectronics , field effect transistor , saturation (graph theory) , radiation , transistor , absorbed dose , gate oxide , voltage , negative bias temperature instability , sensitivity (control systems) , reverse short channel effect , gamma ray , atomic physics , optics , physics , nuclear physics , electronic engineering , mathematics , quantum mechanics , combinatorics , engineering
The influence of gate bias during gamma-ray irradiation on the threshold voltage shift of radiation sensitive p-channel MOSFETs determined on the basis of transfer characteristics in saturation has been investigated. It has been shown that for the gate bias during the irradiation of 5 V and 10 V the sensitivity of these transistors can be presented as the threshold voltage shift and the absorbed irradiation dose ratio. On the bases of the subthreshold characteristics and transfer characteristics in saturation using the midgap technique we have determined the densities of radiation induced oxide traps and interface traps responsible for the threshold voltage shift. In addition, the charge pumping technique was used to determine the energy density of true interface traps. It has been shown that radiation-induced oxide traps have dominant role on threshold voltage shift, especially for gate biases during the irradiation of 5 V and 10 V