Open AccessImpact of forward emitter current gain and geometry of pnp power transistors on radiation tolerance of voltage regulators
Author(s) -
Vladimir Dj. Vukić,
P. Osmokrović
Publication year - 2010
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1003179v
Subject(s) - common emitter , transistor , optoelectronics , materials science , current (fluid) , bipolar junction transistor , voltage , radiation , electrical engineering , power semiconductor device , optics , physics , engineering
Low-dropout voltage regulators with various geometries and technological realisations of serial pnp power transistors were exposed to ionizing radiation. Although devices with vertical emitters were considered much less susceptible to the influence of radiation on forward emitter current gain than circuits with round emitters, the experiment showed a similar degradation of current gain in both cases. The main reason of high radiation susceptibility of the examined vertical serial pnp transistor is the implementation of an interdigitated emitter, with high perimeter-to-area ratio, causing the great increase of serial transistor’s base current, but a minor influence on the maximum output current. Transistors with round emitters with small perimeter-to-area ratio expressed a moderate current gain degradation, but a rapid fall of the emitter injection efficiency, causing a significant decrease of the maximum output current. Regardless of the similar forward emitter current gain degradation, reliability and operational characteristics of two types of low-dropout voltage regulators were completely different