Open AccessSimulated exposure of titanium dioxide memristors to ion beams
Author(s) -
Nada S. Marjanović,
Miloš Vujisić,
Koviljka Stanković,
Dejan Despotović,
P. Osmokrović
Publication year - 2010
Publication title -
nuclear technology and radiation protection
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.31
H-Index - 16
eISSN - 1452-8185
pISSN - 1451-3994
DOI - 10.2298/ntrp1002120m
Subject(s) - memristor , materials science , titanium dioxide , ion , platinum , electrode , oxygen , oxide , irradiation , titanium , ohmic contact , chemical physics , nanotechnology , electronic engineering , composite material , layer (electronics) , chemistry , physics , metallurgy , biochemistry , organic chemistry , nuclear physics , engineering , catalysis
The effects of exposing titanium dioxide memristors to ion beams are investigated through Monte Carlo simulation of particle transport. A model assuming ohmic electronic conduction and linear ionic drift in the memristor is utilized. The memristor is composed of a double-layer titanium dioxide thin film between two platinum electrodes. Obtained results suggest that a significant generation of oxygen ion/oxygen vacancy pairs in the oxide is to be expected along ion tracks. These can influence the device’s operation by lowering the resistance of the stoichiometric oxide region and the mobility of the vacancies. Changes induced by ion irradiation affect the current-voltage characteristic and state retention ability of the memristor. If the displaced oxygen ions reach the platinum electrodes, they can form the O2 gas and cause a permanent disruption of memristor functionality