Open AccessInvestigation of Hg 1-X Cdx te epitaxial vapor phase growth under isothermal conditions
Author(s) -
V. Jović,
Z. Djinović
Publication year - 1999
Publication title -
journal of the serbian chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.227
H-Index - 45
eISSN - 1820-7421
pISSN - 0352-5139
DOI - 10.2298/jsc9908463j
Subject(s) - activation energy , epitaxy , arrhenius equation , isothermal process , cadmium telluride photovoltaics , substrate (aquarium) , analytical chemistry (journal) , crystal growth , diffusion , chemistry , crystallization , vapor phase , materials science , crystallography , thermodynamics , nanotechnology , physics , oceanography , organic chemistry , layer (electronics) , chromatography , geology
The Hg 1. x Cd x Te layers were grown by vapor phase epitaxy on Cd-terminated {111} CdTe single crystal substrates from a HgTe solid source under isothermal conditions in a semi-closed system with controlled Hg vapor pressure. The growth kinetics were investigated in the temperature region from 420?C to 550?C with different source to substrate spacings, varying from 1 to 11 mm. It was found that the dependence of the growth rate on temperature could be well described by an Arrhenius type equation with an activation energy of 80 kJ/mol in the investigated temperature interval. The activation energies for the crystallization were the same for all the investigated source to substrate spacing.This activation energy value points to the importance of a solid-state diffusion process in the Hg 1-x Cdx Te/CdTe epitaxial couple obtained by isothermal growth under the given experimental conditions.