Experimental determination of activity interaction coefficients of components in Si-B-Fe and Si-B-Al ternary systems at 1723 K
Author(s) -
Fan Yang,
YiCun Zhou,
Jian Wu,
Wenhui Ma,
Yun Lei
Publication year - 2020
Publication title -
journal of mining and metallurgy section b metallurgy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.42
H-Index - 20
eISSN - 2217-7175
pISSN - 1450-5339
DOI - 10.2298/jmmb190731006y
Subject(s) - electron microprobe , silicon , solubility , activity coefficient , boron , ternary operation , flory–huggins solution theory , impurity , analytical chemistry (journal) , solid solution , ternary numeral system , materials science , chemistry , aqueous solution , metallurgy , chromatography , organic chemistry , computer science , composite material , programming language , polymer
The interactions among impurity components in Si-based solution are the important thermodynamic parameters for the purification of silicon materials. A ?same concentration? method was used to determine the activity interaction coefficients of Fe to B and Al to B in the silicon solution. Fe and Al were respectively dissolved into the binary Si-B solution at 1723 K with the holding time of 5 h, 7 h, 9 h, and 11 h. The equilibrium concentrations of Fe, B in the Si-B-Fe system and Al, B in the Si-B-Al system were determined. The interaction coefficients of Fe to B and Al to B were obtained by fitting the solubility data of B, Fe, and Al. The solubility relationships between B and [%Fe], and between B and [%Al] were obtained, respectively. It was found by the SEM and EPMA pictures of the samples that the third component Fe or Al added to the binary Si-B solution was alloyed, which verifies the accuracy of the experimental determination results. The significance of the activity interaction coefficient of B on boron removal from industrial silicon was analyzed.
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