Open AccessEffects of γ-irradiation on electrical characteristics of power vdmos transistors
Author(s) -
Zoran Pavlović,
I. Manić,
S. Golubović
Publication year - 2002
Publication title -
facta universitatis. series: physics, chemistry and technology
Language(s) - English
Resource type - Journals
eISSN - 2406-0879
pISSN - 0354-4656
DOI - 10.2298/fupct0204223p
Subject(s) - transconductance , irradiation , materials science , transistor , optoelectronics , power density , current (fluid) , gate oxide , oxide , power (physics) , electrical engineering , electronic engineering , voltage , engineering , physics , thermodynamics , nuclear physics , metallurgy
In this paper we present the results of both experimental investigation and analytical modelling of γ-irradiation effects on basic electrical characteristics of power VDMOS transistors. First, an analytical model that yields the drain current and transconductance dependencies on gate oxide charge density is developed. The experimental data are utilized to establish an analytical relation between the absorbed dose of γ-irradiation and corresponding effective density of gate oxide charges, as well as to extract the values of model parameters. Drain current and transconductance of VDMOS devices are then modelled as the functions of irradiation dose. Finally, the results of modelling are compared with experimental data