Open AccessControlled electron leakage in electron blocking layer free InGaN/GaN nanowire light-emitting diodes
Author(s) -
Ravi Teja Velpula,
Barsha Jain,
Trupti Ranjan Lenka,
Hieu Pham Trung Nguyen
Publication year - 2021
Publication title -
facta universitatis. series electronics and energetics/facta universitatis. series: electronics and energetics
Language(s) - English
Resource type - Journals
eISSN - 2217-5997
pISSN - 0353-3670
DOI - 10.2298/fuee2103393v
Subject(s) - optoelectronics , light emitting diode , voltage droop , materials science , nanowire , diode , electron , quantum dot , quantum well , active layer , leakage (economics) , quantum efficiency , physics , layer (electronics) , optics , nanotechnology , power (physics) , laser , quantum mechanics , economics , voltage divider , macroeconomics , thin film transistor
In this study, we have proposed and investigated the effect of coupled quantum wells to reduce electron overflow in InGaN/GaN nanowire white color light-emitting diodes. The coupled quantum well before the active region could decrease the thermal velocity, which leads to a reduced electron mean free path. This improves the electron confinement in the active region and mitigates electron overflow in the devices. In addition, coupled quantum well after the active region utilizes the leaked electrons from the active region and contributes to the white light emission. Therefore, the output power and external quantum efficiency of the proposed nanowire LEDs are improved. Moreover, the efficiency droop was negligible up to 900 mA injection current.