Open AccessEnhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices
Author(s) -
S Vyacheslav Pershenkov,
S Alexander Bakerenkov,
Sergei Rodin,
A Vladislav Felitsyn,
I Alexander Zhukov,
A Vitaly Telets,
V.V. Belyakov
Publication year - 2020
Publication title -
facta universitatis. series electronics and energetics/facta universitatis. series: electronics and energetics
Language(s) - English
Resource type - Journals
eISSN - 2217-5997
pISSN - 0353-3670
DOI - 10.2298/fuee2002303p
Subject(s) - sensitivity (control systems) , materials science , dose rate , optoelectronics , absorbed dose , irradiation , oxide , radiation , chemistry , radiochemistry , optics , electronic engineering , physics , nuclear physics , engineering , metallurgy
Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as ?true? dose rate effect.