Open Access3.3 kV IGBT and diode chipset using lifetime control techniques and low-efficiency emitters
Author(s) -
M. Netzel,
Ralf Lerner,
Ralf Siemieniec,
Josef Lutz
Publication year - 2002
Publication title -
facta universitatis - series electronics and energetics
Language(s) - English
Resource type - Journals
eISSN - 2217-5997
pISSN - 0353-3670
DOI - 10.2298/fuee0201051n
Subject(s) - chipset , flyback diode , diode , common emitter , materials science , insulated gate bipolar transistor , optoelectronics , power (physics) , doping , irradiation , electrical engineering , engineering , physics , voltage , chip , quantum mechanics , flyback transformer , transformer , nuclear physics
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