Design of High-Power Reverse-Conducting Gate-Commutated Thyristors | Zendy

D. S. Eun | Zendy; Chang Li | Zendy; Cheol Sang | Zendy; Kyun Nam | Zendy; Qui Jian | Zendy; Bin Ji | Zendy

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Design of High-Power Reverse-Conducting Gate-Commutated Thyristors

Author(s) -

D. S. Eun,

Chang Li,

Cheol Sang,

Kyun Nam,

Qui Jian,

Bin Ji

Publication year - 2002

Publication title -

facta universitatis - series electronics and energetics

Language(s) - English

Resource type - Journals

eISSN - 2217-5997

pISSN - 0353-3670

DOI - 10.2298/fuee0201041e

Subject(s) - thyristor , wafer , electrical engineering , high voltage , integrated gate commutated thyristor , gate turn off thyristor , diode , engineering , power (physics) , waveform , materials science , voltage , optoelectronics , electronic engineering , transistor , physics , quantum mechanics , gate oxide

Different structures of Reserve-Conducting Gate-Commutated\break Thyristor (RC-GCT) are considered in this paper. The non-punch-through and punch-through structures were recommended for blocking voltages of 2.5 kV and 4.5 kV, respectively. The photomasks were designed upon the high turn-off capability of GCT and the monolithic integration of GCT and free wheeling diode (FWD). For a large-diameter RC-GCT device with a high turn-off current capacity, FWD and GCT were designed at the center region and the outer part of wafer, respectively. Mixed mode simulation results using the ISE-TCAD simulators give turn-on and turn-off waveforms of the considered structures. A modified isolation structure between GCT and FWD is proposed for RC-GCT.

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