Open AccessDesign of High-Power Reverse-Conducting Gate-Commutated Thyristors
Author(s) -
Dong Eun,
Li Zhang Chang,
Cheol Kim Sang,
Kyun Kim Nam,
Qui Lu Jian,
Bin Ji
Publication year - 2002
Publication title -
facta universitatis. series electronics and energetics/facta universitatis. series: electronics and energetics
Language(s) - English
Resource type - Journals
eISSN - 2217-5997
pISSN - 0353-3670
DOI - 10.2298/fuee0201041e
Subject(s) - thyristor , wafer , electrical engineering , high voltage , integrated gate commutated thyristor , gate turn off thyristor , diode , engineering , power (physics) , waveform , materials science , voltage , optoelectronics , electronic engineering , transistor , physics , quantum mechanics , gate oxide
Different structures of Reserve-Conducting Gate-Commutated\break Thyristor (RC-GCT) are considered in this paper. The non-punch-through and punch-through structures were recommended for blocking voltages of 2.5 kV and 4.5 kV, respectively. The photomasks were designed upon the high turn-off capability of GCT and the monolithic integration of GCT and free wheeling diode (FWD). For a large-diameter RC-GCT device with a high turn-off current capacity, FWD and GCT were designed at the center region and the outer part of wafer, respectively. Mixed mode simulation results using the ISE-TCAD simulators give turn-on and turn-off waveforms of the considered structures. A modified isolation structure between GCT and FWD is proposed for RC-GCT.