Open AccessPerformance Analysis of Ring Oscillators and Current-Starved VCO in 45-nm CMOS Technology
Author(s) -
Prakash Sharma
Publication year - 2022
Publication title -
international journal for research in applied science and engineering technology
Language(s) - English
Resource type - Journals
ISSN - 2321-9653
DOI - 10.22214/ijraset.2022.39908
Subject(s) - voltage controlled oscillator , nmos logic , phase noise , cmos , ring oscillator , vackář oscillator , electrical engineering , variable frequency oscillator , digitally controlled oscillator , delay line oscillator , electronic engineering , voltage , physics , materials science , optoelectronics , engineering , transistor
This paper presents a relative study among two Ring oscillators architecture (CMOS, NMOS) and current-starved Voltage-controlled oscillator (CS-VCO) on the basis of different parameters like power dissipation ,phase noise etc. All the design has been done in 45- nm CMOS technology node and 2.3 GHz Centre frequency have been taken for the comparison because of their applications in AV Devices and Radio control. An inherent idea of the given performance parameters has been realize by thecomparative study. The comparative data shows that NMOS based Ring oscillator is good option in terms of the phase noise performance. In this study NMOS Ring Oscillator have attain a phase noise -97.94 dBc/Hz at 1 MHz offset frequency from 2.3 GHz center frequency. The related data also shows that CMOS Ring oscillator is the best option in terms of power consumption. In this work CMOS Ring oscillator evacuatea power of 1.73 mW which is quite low. Keywords: Voltage controlled oscillator (VCO), phase noise, power consumption, Complementary metal-oxide-semiconductor (CMOS), Current Starved Voltage-Controlled Oscillator (CS- VCO), Pull up network (PUN), Pull down network (PDN)