Open AccessInvestigating the Impacts of Temperature on the Electronic Conductivity of Si AND GaAs
Author(s) -
Okpaga D. M
Publication year - 2021
Publication title -
international journal for research in applied science and engineering technology
Language(s) - English
Resource type - Journals
ISSN - 2321-9653
DOI - 10.22214/ijraset.2021.37861
Subject(s) - gallium arsenide , silicon , conductivity , materials science , arsenide , gallium , semiconductor , band gap , indium arsenide , fabrication , optoelectronics , condensed matter physics , chemistry , physics , metallurgy , pathology , medicine , alternative medicine
This work explains the impacts of temperature on the electronic conductivity of silicon and gallium arsenide. Illustrations of how conductivity varies at different temperatures were depicted using equations and graphs. The effective use of semiconductor materials depends on the proper fabrication of the material about its temperature dependence. Also, the analysis of the variation of electronic conductivity in both silicon and that of gallium arsenide with a small band gap is performed towards analyzing the impacts of this on silicon and gallium arsenide. Keywords: Temperature, Silicon, Gallium Arsenide, Conductivity, Variation.