Open AccessDevice Performance Analysis of Graphene Nanoribbon Field-Effect Transistor with Rare-Earth Oxide (La2O3) Based High-k Gate Dielectric
Author(s) -
M. K. Bera
Publication year - 2018
Publication title -
international journal for research in applied science and engineering technology
Language(s) - English
Resource type - Journals
ISSN - 2321-9653
DOI - 10.22214/ijraset.2018.1257
Subject(s) - graphene , materials science , oxide , dielectric , gate dielectric , gate oxide , optoelectronics , field effect transistor , high κ dielectric , rare earth , transistor , nanotechnology , electrical engineering , engineering , voltage , metallurgy
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