Open AccessDesign and Performance Analysis of 256 bit SRAM Using different SRAM cell in 45nm CMOS Technology
Publication year - 2017
Publication title -
international journal of modern trends in engineering and research
Language(s) - English
Resource type - Journals
eISSN - 2393-8161
pISSN - 2349-9745
DOI - 10.21884/ijmter.2017.4111.0pwpc
Subject(s) - static random access memory , cmos , bit (key) , computer science , electronic engineering , engineering , computer hardware , computer network