Open AccessHeat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices
Author(s) -
И. С. Езубченко,
И. А. Черных,
И. А. Черных,
A. A. Andreev,
I. O. Mayboroda,
E. M. Kolobkova,
Khrapovitskaya Yu. V.,
J. V. Grishchenko,
P. A. Perminov,
М. Л. Занавескин
Publication year - 2022
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.338
H-Index - 34
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/tpl.2022.04.53163.19111
Subject(s) - diamond , materials science , heat sink , gallium nitride , silicon carbide , optoelectronics , composite number , nitride , gallium , silicon , silicon nitride , transistor , composite material , metallurgy , electrical engineering , layer (electronics) , voltage , engineering