Open AccessTemperature dependence of the Fermi level in HgCdTe narrow-gap bulk films at different mercury vacancy concentrations
Author(s) -
Д. В. Козлов,
M. C. Zholudev,
А. В. Иконников,
S.G. Pavlov,
Hübers H.-W.
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.287
H-Index - 40
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/sc.2022.05.53424.9789
Subject(s) - fermi level , acceptor , photoconductivity , semiconductor , band gap , condensed matter physics , vacancy defect , charge carrier , ionization , doping , quenching (fluorescence) , atomic physics , impurity , materials science , chemistry , ion , physics , electron , optoelectronics , organic chemistry , quantum mechanics , fluorescence