Open AccessCurrent Transfer in a Semiconductor Structure with a Porous Silicon Film formed by Metal-Stimulated Etching
Author(s) -
N. N. Melnik,
В. В. Трегулов,
V. G. Litvinov,
А. В. Ермачихин,
E. P. Trusov,
G. N. Skoptsova,
Anton I. Ivanov
Publication year - 2022
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.287
H-Index - 40
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/sc.2022.04.53235.9782
Subject(s) - materials science , silicon , etching (microfabrication) , porous silicon , raman spectroscopy , semiconductor , deep level transient spectroscopy , substrate (aquarium) , barrier layer , band gap , raman scattering , optoelectronics , layer (electronics) , composite material , optics , oceanography , physics , geology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom