Open AccessInfluence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD
Author(s) -
A. B. Chigineva,
N. V. Baidus,
С. М. Некоркин,
K. S. Zhidyaev,
В. Е. Котомина,
I. V. Samartsev
Publication year - 2022
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.287
H-Index - 40
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/sc.2022.01.53029.9732
Subject(s) - thyristor , passivation , blocking (statistics) , gallium arsenide , materials science , sulfide , topology (electrical circuits) , optoelectronics , integrated gate commutated thyristor , voltage , chemistry , electrical engineering , nanotechnology , layer (electronics) , computer science , metallurgy , computer network , engineering