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Effect of neutron irradiation on the spectrum of deep-level defects in GaAs grown by liquid-phase epitaxy in hydrogen or argon ambient
Author(s) -
Sobolev M M.,
F. Yu. Soldatenkov
Publication year - 2022
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.287
H-Index - 40
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/sc.2022.01.53017.9729
Subject(s) - deep level transient spectroscopy , epitaxy , argon , materials science , hydrogen , irradiation , capacitance , analytical chemistry (journal) , impurity , acceptor , spectroscopy , optoelectronics , layer (electronics) , chemistry , nanotechnology , silicon , condensed matter physics , physics , organic chemistry , electrode , chromatography , quantum mechanics , nuclear physics

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